Forming a porous dielectric layer and structures formed thereby

Details Forming a porous dielectric layer and structures formed thereby Forming a porous dielectric layer and structures formed thereby

2006-03-03

2009-06-09

Pert, Evan (Department: 2826)

Electricity: conductors and insulators

Insulators

C257SE21581, C257S499000

Reexamination Certificate

active

07544896

ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric layer, wherein the porogen disposed within the dielectric layer decomposes to form at least one pore.

REFERENCES:
patent: 5976284 (1999-11-01), Calvert et al.
patent: 2002/0139387 (2002-10-01), Yates
patent: 2003/0004218 (2003-01-01), Allen et al.
patent: 2003/0008129 (2003-01-01), Cotte et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
Pending U.S. Appl. No. 11/096,678, filed Mar. 31, 2005, Inventor: Kloster et al.

Affiliated with

Also associated with

Rating

Forming a porous dielectric layer and structures formed thereby does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming a porous dielectric layer and structures formed thereby, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a porous dielectric layer and structures formed thereby will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4104490