Forming a photodiode to include a superlattice exclusion layer

Details Forming a photodiode to include a superlattice exclusion layer Forming a photodiode to include a superlattice exclusion layer

2006-05-16

2006-05-16

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S094000, C438S095000, C438S602000

Reexamination Certificate

active

07045378

ABSTRACT:
A photosensitive diode has superlattice exclusion region formed from a stack of first and second layers. The first layers are penetrated by minority carriers using quantum mechanical tunneling and reduce minority carrier mobility. The second layers have a sufficiently low bandgap that the tunneling minority carriers can reach an active region of the diode. The process of successively forming first and second layers is repeated until the exclusion region is at least three times the minority carrier diffusion length.

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