Forming a non single crystal semiconductor layer by using an ele

Details Forming a non single crystal semiconductor layer by using an ele Forming a non single crystal semiconductor layer by using an ele

1992-07-01

1993-11-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 148DIG1, H01L 21326

Patent

active

052623505

ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semiconductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.

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