Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-04-19
2011-04-19
Lindsay, Jr., Walter L. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE21702, C257SE29168
Reexamination Certificate
active
07928426
ABSTRACT:
In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer wrapped around the QW layer. Other embodiments are described and claimed.
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Chui Chi On
Kavalieros Jack T.
Majhi Prashant
Tsai Wilman
Intel Corporation
Isaac Stanetta D
Lindsay Jr. Walter L.
Trop Pruner & Hu P.C.
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