Forming a non-monocrystalline silicone semiconductor having pin

Details Forming a non-monocrystalline silicone semiconductor having pin Forming a non-monocrystalline silicone semiconductor having pin

1995-06-01

1996-10-08

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258, 437101, 437109, 437113, 427574, 427575, H01L 3120

Patent

active

055630758

ABSTRACT:
A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

REFERENCES:
patent: 4471155 (1984-09-01), Mohr et al.
patent: 4782376 (1988-11-01), Catalano
patent: 4816082 (1989-03-01), Guha et al.
patent: 5104455 (1992-04-01), Yokota et al.
patent: 5204272 (1993-04-01), Guha et al.
patent: 5256576 (1993-10-01), Guha et al.
patent: 5429685 (1995-07-01), Saito et al.
Bragagnolo et al., "Optimum Deposition Conditions . . . System", Conf. Rec. 19th IEEE Photovoltaic Specialists Conf., 1987, pp. 878-883.
Yoshida et al., "Efficiency Improvement in Amorphous-SiGe:H Solar . . . " Conf. Rec. 19th IEEE Photovoltaic Specialists Conf., 1987, pp. 1101-1106.
Hiroe et al., "Stability and Terrestrial Application . . . Cells", Conf. Rec. 20th IEEE Photovoltaic Specialists Conf., 1987, pp. 1111-1116.
Sato et al., "Preparation of High Quality a-SiGe:H Films . . . Cells", Conf. Rec., 19th IEEE Photovoltaic Specialists Conf., 1988, pp. 73-78.
Guha et al., "A Novel Design for Amorphous Silicon Alloy Solar Cells" Conf. Rec., 20th IEEE Photovoltaic Specialists Conf., 1988, pp. 79-84.
Pawlikiewicz et al., "Numerical Modeling of Multijunctions, . . . Cells" Conf. Rec. 20th IEEE Photovoltaic Specialists Conf., 1988, pp. 251-255.
Shing et al., "Election Cyclotron Resonance Microwave . . . A SiC:H films", Solar Cells, vol. 30, pp. 391-401 (1991).
Hamakawa, "Electron Cyclotron Resonance CVD . . . OPTO-Electronic Devices", 8th E.C. Photovoltaic Solar En. Conf., vol. II pp. 1212-1219, (1989).

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