Forming a gate electrode on a semiconductor substrate by using a

Details Forming a gate electrode on a semiconductor substrate by using a Forming a gate electrode on a semiconductor substrate by using a

1996-02-28

1997-07-29

Tsai, Jey

Fishing, trapping, and vermin destroying

437 41, 437 36, 437912, H01L 21265

Patent

active

056521570

ABSTRACT:
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower resistance and lower parasitic interactions, an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyamide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

REFERENCES:
patent: 3674914 (1972-07-01), Barr
patent: 3713219 (1975-10-01), Lichtblau
patent: 4795722 (1989-01-01), Welch et al.
patent: 4857481 (1989-08-01), Tam et al.
patent: 5053348 (1991-10-01), Nishra et al.
patent: 5063169 (1991-11-01), DeBruin et al.
patent: 5116772 (1992-05-01), Park et al.
patent: 5272111 (1993-12-01), Kosaki
patent: 5279990 (1994-01-01), Sun et al.
Japanese Abstract, vol. 12, No. 55 (M669) (2902) published Feb. 19, 1988.
European Search Report No. EP 91 11 8902.

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