Forming a conductive, protective layer for multilayer metallizat

Details Forming a conductive, protective layer for multilayer metallizat Forming a conductive, protective layer for multilayer metallizat

1984-03-26

1986-04-08

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 156656, 427 89, H01L 2158

Patent

active

045803323

ABSTRACT:
An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated with a conductive indium arsenide layer during production of the structure and an upper metallization layer subsequently is applied to the structure wherein at least a portion of the subsequent metallization layer is in ohmic contact with the conductive indium arsenide layer whereby the lower metallization layer is protected by the intervening indium arsenide layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. The use of the indium arsenide layer over a metallization layer further enhances the construction process by the use of its antireflective properties during patterning of a photoresist applied over the indium arsenide layer.

REFERENCES:
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patent: 4289574 (1981-09-01), Radigan et al.
patent: 4289834 (1981-09-01), Alcorn et al.
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4415606 (1983-11-01), Cynkar et al.
patent: 4507852 (1985-04-01), Karulkar
H. Okimura, C. R. Kannewurf and J. O. Brittain, "Preparation and Electrical Properties of InAs Thin Films", Journal of Electronic Materials, vol. 7, No. 5, 1978, pp. 627-637.
U.S. patent application Ser. No. 722,957, filed Apr. 12, 1985 of Borodovsky et al.

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