Forming a carbon passivated ovonic threshold switch

Details Forming a carbon passivated ovonic threshold switch Forming a carbon passivated ovonic threshold switch

2011-05-10

2011-05-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S013000, C257SE29105, C438S900000

Reexamination Certificate

active

07939815

ABSTRACT:
By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

REFERENCES:
patent: 5159661 (1992-10-01), Ovshinsky et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.

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