Forming a carbon layer between phase change layers of a...

Details Forming a carbon layer between phase change layers of a... Forming a carbon layer between phase change layers of a...

2007-10-16

2007-10-16

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C257S003000, C257S004000, C257S042000, C438S102000

Reexamination Certificate

active

11037850

ABSTRACT:
A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.

REFERENCES:
patent: 6566700 (2003-05-01), Xu
patent: 6869841 (2005-03-01), Xu
patent: 2006/0097341 (2006-05-01), Pellizzer et al.
Van Landingham, “Circuit Applications of Ovonic Switching Devices”, IEEE Transactions on Electron Devices, vol. ED-20, No. 2, Feb. 1973.

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