Forming a 3-D semiconductor die structure with an...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C257S778000, C257S780000

Reexamination Certificate

active

07993971

ABSTRACT:
A method for forming a semiconductor structure includes forming a first contact pad on a first die, wherein the first contact pad comprises a first metal element, forming a metal over the first contact pad, wherein the metal comprises a second metal element, and the second metal element is different from the first metal element. The method further includes rapidly reflowing a portion of the metal to form a thin intermetallic layer. The method further includes attaching the first contact pad of the first die to a second contact pad of a second die, wherein attaching comprises heating the first contact pad and the second contact pad to reflow the metal to form an intermetallic layer such that substantially all of the metal formed over the first contact pad is used as part of the intermetallic layer.

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