Formed top contact for non-flat semiconductor devices

Fishing – trapping – and vermin destroying

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357 68, 437220, H01L 2960

Patent

active

050015451

ABSTRACT:
An improved contact is obtained to power devices having a raised dielectric region adjacent the die contact region by providing a contact dimple on the otherwise flat metal lead used for die contact. The dimple is arranged above the die contact and soldered thereto. The radius of curvature and depth of the dimple is adjusted so that the contact lead is far enough away from the edge of the surrounding raised dielectric at the edge of the die contact to provide a laterally concave outwardly air-solder interface in that location. This prevents solder creep onto the dielectric surface and avoids die edge shorting. Several dimple shapes are described.

REFERENCES:
patent: 3290564 (1966-12-01), Wolff, Jr.
patent: 3478420 (1968-12-01), Grimes et al.
patent: 3500136 (1968-01-01), Fischer
patent: 3569797 (1971-03-01), Simmons
patent: 3763403 (1972-03-01), Lootens
patent: 4012765 (1975-09-01), Lehner et al.
patent: 4117508 (1978-09-01), Koenig
patent: 4158745 (1979-06-01), Keller
patent: 4252864 (1981-02-01), Coldren
patent: 4346396 (1982-08-01), Carroll, II et al.
patent: 4616412 (1986-10-01), Schroeder
patent: 4631820 (1986-12-01), Harada et al.
patent: 4827376 (1989-05-01), Voss

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