Formation of vertical polysilicon resistor having a nitride side

Details Formation of vertical polysilicon resistor having a nitride side Formation of vertical polysilicon resistor having a nitride side

1992-12-31

1994-07-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437918, H01L 2170, H01L 2700

Patent

active

053309308

ABSTRACT:
A new method of forming a polysilicon resistor is achieved. Polysilicon gate structures and source/drain regions are formed in and on a semiconductor substrate. A passivation layer is formed overlying the gate structures. A contact window is opened to the drain portion of the source/drain region. A resistor is formed within the contact window as follows. A nitride layer is deposited over the passivation layer and within the contact window. The nitride layer is etched back to form nitride sidewalls within the contact window. A layer of polysilicon is deposited over the passivation layer and within the contact window. The polysilicon layer is etched back to leave the polysilicon only within the contact opening completing formation of the resistor. A second contact window is opened to the source portion of the source/drain region. A barrier metal layer is deposited over the passivation layer, over the resistor, and within the second contact window. A metal layer is deposited over the barrier metal layer and the metal interconnection of the integrated circuit is completed.

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patent: 5013677 (1991-05-01), Hozumi
patent: 5086017 (1992-02-01), Lu
patent: 5170233 (1992-12-01), Liu et al.
patent: 5177030 (1993-01-01), Lee et al.
patent: 5229311 (1993-07-01), Lai et al.

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