Formation of trench isolation for active areas and first level c

Details Formation of trench isolation for active areas and first level c Formation of trench isolation for active areas and first level c

1997-04-14

2000-05-16

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438129, 438427, 438420, H01L 2176

Patent

active

060636874

ABSTRACT:
A trench isolation structure for a semiconductor is provided including an isolation ring and an isolation path. The isolation ring surrounds active semiconductor areas and is bordered on the outside by inactive semiconductor area. The isolation path extends from the isolation ring through the inactive semiconductor area. A first level conductor on the isolation path electrically connects or capacitively couples a device in the active semiconductor area to a location on the substrate outside the isolation ring. The isolation path has a configuration derived from the layout of the conductor.

REFERENCES:
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patent: 4374011 (1983-02-01), Vora et al.
patent: 4727048 (1988-02-01), Pierce et al.
patent: 4857141 (1989-08-01), Abe et al.
patent: 4916513 (1990-04-01), Li
patent: 5362669 (1994-11-01), Boyd et al.

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