Formation of thin-film resistors on silicon substrates

Details Formation of thin-film resistors on silicon substrates Formation of thin-film resistors on silicon substrates

1988-02-26

1988-11-01

Guynn, Herbert B.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Making composite or hollow article

437 63, B22F 302

Patent

active

H00005460

ABSTRACT:
The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

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