Formation of superconducting devices using a selective etching t

Details Formation of superconducting devices using a selective etching t Formation of superconducting devices using a selective etching t

1998-01-23

1999-09-14

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Utilizing particle treatment of selected regions to form...

505410, 505413, 505728, 505210, 505211, H01L 3924

Patent

active

059522690

ABSTRACT:
A method for forming a superconducting device using a selective etching technique on superconducting thin films. The method utilizes rapid etching which combines ion implantation with chemical etching. The portions of the superconducting film to be retained are masked from the ion implantation process. The chemical etching process then removes the implanted portions of the superconducting film at a much faster rate than the portions not implanted so that only the un-implanted portions remain. The resulting superconducting devices can be used, e.g., as nanostructures and nano tips, bolometers, multilayer RF coils, microwave waveguides and filters.

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