Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Using an organometallic intermediate
Patent
1989-05-16
1994-05-24
King, Roy
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Using an organometallic intermediate
505734, 505730, 505742, 427 62, 4272553, 4272552, 4272551, 4271263, C23C 1600, B05D 512
Patent
active
053148665
ABSTRACT:
A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.
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Berry Alan D.
Cukauskas Edward J.
Gaskill David K.
Henry Richard L.
Holm Ronald T.
Edelberg Barry A.
King Roy
McDonnell Thomas E.
Spevack David
The United States of America as represented by the Secretary of
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