Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-06-28
2010-06-08
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S025000, C438S028000, C438S034000, C438S039000, C257S021000, C257S022000, C257SE31127, C257SE31129
Reexamination Certificate
active
07732229
ABSTRACT:
Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.
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Bollman Brent
Kao Sam
Leidholm Craig
Roscheisen Martin R.
Sheats James R.
Lee Hsien-ming
Nanosolar, Inc.
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