Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-06-12
2000-04-04
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
060459549
ABSTRACT:
A half tone phase shift mask material, suitable for use at 193 nm is disclosed. It comprises a layer of nitrogen rich silicon nitride that was formed by subjecting a mixture of a nitrogen bearing gas, such as nitrogen and/or ammonia, with a silicon bearing gas, such as silane, to a plasma discharge. Provided the ratio of the nitrogen bearing to the silicon bearing gases is about 10 to 1, films having the required optical properties at 193 nm are formed. These properties are a reflectance that is less than 15% and a transmittance that is between 4 and 15%. Related optical properties, namely an extinction coefficient of about 0.4 and a refractive index of about 2.5, are also closely approached. Additionally, the films are stable under prolonged UV exposure and exhibit good etch behavior.
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B.W. Smith et al, "The Effects of Excimer Laser Radiation on a Henvated Phase Shift Masking Materials" SPIE, 1997, vol. 3051, p. 236-244.
Chen H.L.
Dai Chang-Ming
Wang Lon A.
Ackerman Stephen B.
Industrial Technology Research Institute
Rosasco S.
Saile George O.
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