Fishing – trapping – and vermin destroying
Patent
1993-03-05
1994-09-06
Quach, T. N.
Fishing, trapping, and vermin destroying
437946, 148DIG17, 148DIG19, 20419232, H01L 21283, H01L 21302
Patent
active
053447930
ABSTRACT:
An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
REFERENCES:
patent: 4164461 (1979-08-01), Schilling
patent: 4261764 (1981-04-01), Narayan
patent: 4495510 (1985-01-01), Roth et al.
patent: 4522485 (1985-06-01), Kamiya et al.
patent: 4545116 (1985-10-01), Lau
patent: 4579609 (1986-04-01), Reif et al.
patent: 4585517 (1986-04-01), Stemple
patent: 4647361 (1987-03-01), Bauer
patent: 4647494 (1987-03-01), Meyerson et al.
patent: 4886765 (1989-12-01), Chen et al.
patent: 4908334 (1990-03-01), Zuhr et al.
patent: 4977098 (1990-12-01), Yu et al.
patent: 5023201 (1991-06-01), Stanasolovich et al.
Doebler Uwe
Haensch Wilfried
Schwalke Udo
Zeininger Heinrich
Zeller Christoph
Ahmed Adel A.
Quach T. N.
Siemens Aktiengesellschaft
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