Formation of silicided junctions in deep sub-micron MOSFETs by d

Fishing – trapping – and vermin destroying

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437946, 148DIG17, 148DIG19, 20419232, H01L 21283, H01L 21302

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active

053447930

ABSTRACT:
An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.

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