Formation of silicide contacts using a sidewall oxide process

Details Formation of silicide contacts using a sidewall oxide process Formation of silicide contacts using a sidewall oxide process

1992-02-13

1993-07-27

Maples, John S.

Fishing, trapping, and vermin destroying

437200, 437245, 148DIG147, H01L 2144, H01L 21265

Patent

active

052310426

ABSTRACT:
A method for formation of silicide structures on a semiconductor device. Oxide sidewalls are formed upon and selectively removed from polysilicon contacts. Refractory metal is deposited and heated, unreacted metal is removed, leaving a metal silicide on selected polysilicon sidewalls.

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