Formation of sidewall oxide layers by reactive oxygen ion etchin

Details Formation of sidewall oxide layers by reactive oxygen ion etchin Formation of sidewall oxide layers by reactive oxygen ion etchin

1981-12-07

1984-02-21

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 204192E, 156643, H01L 2142, H01L 21423, C23C 1500

Patent

active

044321325

ABSTRACT:
This invention involves the defining of a submicron feature (21 or 93) in a structure, typically an insulated gate field effect transistor structure (30, 40, or 110). This feature is defined by a sidewall oxide protective masking layer (21 or 71) formed by reactive oxygen ion etching of the structure being built at a time when an exposed surface thereof in the vicinity of the sidewall contains atoms of a material--for example, silicon or aluminum--which combine with the oxygen ions to form the sidewall oxide layer.

REFERENCES:
patent: 3920483 (1975-11-01), Johnson
patent: 4037307 (1977-07-01), Smith
patent: 4049521 (1977-09-01), Convertini
patent: 4211582 (1980-07-01), Horng
patent: 4234362 (1980-11-01), Riseman
patent: 4287660 (1981-09-01), Nicholas
patent: 4343082 (1982-08-01), Lepselter
patent: 4343677 (1982-08-01), Kinsbron
patent: 4356210 (1982-10-01), Imai
patent: 4356623 (1982-11-01), Hunter
"Masking for Ion Beam Etching", Gloerson, P. G., Solid State _Technology, Apr. 1976, pp. 68-73.
"Ion Etching for Pattern Delineation", Melliar-Smith, J. Vac. Sci. _Technol., vol. 13, No. 5, Sep./Oct., 1976, pp. 1008-1022.
"Microfabrication by Ion-Beam Etching", Lee, R. E., J. Vac. Sci. _Technol., 16(2), Mar./Apr. 1979, pp. 164-170.
W. R. Hunter, et al., IEEE Electron Device Letters,_"A New Edge-Defined Approach for Submicrometer MOSFET Fabrication, " vol. EDL-2, No. 1, Jan. 1981, pp. 4-6.

Affiliated with

Also associated with

Rating

Formation of sidewall oxide layers by reactive oxygen ion etchin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of sidewall oxide layers by reactive oxygen ion etchin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of sidewall oxide layers by reactive oxygen ion etchin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1029462