Formation of shallow junction by implantation of dopant into par

Details Formation of shallow junction by implantation of dopant into par Formation of shallow junction by implantation of dopant into par

1990-09-06

1992-09-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437950, 437 27, H01L 21265

Patent

active

051457946

ABSTRACT:
A process for producing a semiconductor device, in which a predetermined electroconductive type ion is implanted into a semiconductor substrate, the process comprising the steps of: prior to the implantation of a predetermined electroconductive type ion, implanting an ion different from the electroconductive type ion into the semiconductor substrate having a crystalline structure, to form a disordered region having a degree of disorder such that microchanneling of the later implanted electroconductive type ion does not substantially occur, and that the disordered region is partially crystalline; and implanting the predetermined electroconductive type ion into the disordered region.

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