Formation of self-aligned metal gate FETs using a benignant remo

Details Formation of self-aligned metal gate FETs using a benignant remo Formation of self-aligned metal gate FETs using a benignant remo

1994-04-07

1995-02-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437247, 437962, H01L 21265

Patent

active

053915100

ABSTRACT:
A sub-micron FET is disclosed made by a method using expendable self-aligned gate structure up to and including the step of annealing the source/drain regions. The source/drain regions are formed by ion implantation using the expendable structure (diamond-like-carbon) as a mask. After the expendable structure has performed its further purpose of protecting the gate dielectric from contamination during the annealing cycle, the structure is easily removed by O.sub.2 plasma and replaced by a conventional metal gate material.

REFERENCES:
patent: 3840451 (1974-10-01), Golyanov et al.
patent: 3921282 (1975-11-01), Cunningham et al.
patent: 4312680 (1982-01-01), Hsu
patent: 4358340 (1982-11-01), Fu
patent: 4520553 (1985-06-01), Kraft
patent: 4532698 (1985-08-01), Fang et al.
patent: 4559693 (1985-12-01), Kamei
patent: 4641417 (1987-02-01), McDavid
patent: 4661374 (1987-04-01), Doering
patent: 4729966 (1988-03-01), Koshino et al.
patent: 4769339 (1988-09-01), Ishii
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4845046 (1989-07-01), Shimbo
patent: 4992388 (1991-02-01), Pfiester
patent: 5028552 (1991-07-01), Ushiko
patent: 5202273 (1993-04-01), Nakamura
patent: 5254862 (1993-10-01), Kalyankjumar et al.
D. J. Vikavage, et al., "Plasma Enhanced Chemical Vapor Deposition of Polycrystalline Diamond and Diamondlike Films" 1988 Amer. Vacuum Society, J. Vac. Sci. Technol. A6(3) pp. 1812-1815 May/Jun. 1988.
S. C. Martin, et al., "p-Channel Germanium MOSFET's with High Channel Mobility" IEEE-Electron Device Letters, vol. 10, No. 7, pp. 325-326, Jul. 1989.
G. S. Sandhu, et al., "Reactive Ion Etching of Diamond" App. Phys. Lett. 55 (5) pp. 437-438 American Institute of Physics, Jul., 1989.
H. Matsuhashi, et al., "Effect of W Film Stress on W-Gate MOS Characteristics" Japanese Journal of Applied Physics, pp. 2309-2313 vol. 28, No. 12, Dec. 1989.

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