Formation of ruthenium oxide for integrated circuits

Details Formation of ruthenium oxide for integrated circuits Formation of ruthenium oxide for integrated circuits

1993-04-29

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437201, 437919, H01L 2170

Patent

active

053588894

ABSTRACT:
A method is provided for forming a conductive layer of ruthenium oxide layer RuO.sub.2. The RuO.sub.2 layer is formed from a coating of a precursor solution comprising a ruthenium (III) nitrosyl salt,subsequent heat treatment, and annealing at low temperature. The resulting layer of a tetragonal phase of crystalline ruthenium oxide is suitable for formation thereon of a perovskite structure ferroelectric material for applications in ferroelectric non-volatile memory cells. The chloride free process is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS integrated circuits.

REFERENCES:
patent: 3850668 (1974-11-01), Heffer
patent: 4000346 (1976-12-01), Dowell
patent: 5003428 (1991-03-01), Shepherd
patent: 5155658 (1992-10-01), Inam et al.
Plasma Etching of RuO2 Thin Films, Saito, et al, Jpn. J. Appl. Phys., vol. 31 (1992) Pt. 1, No. 1.

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