Formation of resistor with small occupied area

Details Formation of resistor with small occupied area Formation of resistor with small occupied area

1996-11-20

1999-08-10

Talbot, Brian K.

Coating processes

Electrical product produced

Resistor for current control

427102, 427103, 296101, 29620, B05D 512

Patent

active

059356421

ABSTRACT:
Resistor material such as polysilicon is deposited on the insulating surface of a substrate and patterned to form resistor layers disposed generally parallel. Another resistor material such as polysilicon is deposited filling each space between adjacent resistor layers, with an insulating film being interposed between the upper and lower resistor materials, and etched back to form other resistor layers at respective spaces. After an insulating film is formed covering the resistor layers, contact holes are formed in the insulating film. A conductive layer is deposited and patterned to serially connect the resistor layers.

REFERENCES:
patent: 4541166 (1985-09-01), Yamazaki
patent: 4702937 (1987-10-01), Yamoto et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 5422298 (1995-06-01), Jimenez
patent: 5567977 (1996-10-01), Jimenez

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