Formation of planarized insulating film by plasma-enhanced CVD o

Details Formation of planarized insulating film by plasma-enhanced CVD o Formation of planarized insulating film by plasma-enhanced CVD o

1994-06-03

1996-10-22

Kunemund, Robert

Fishing, trapping, and vermin destroying

437235, 437238, H01L 2102

Patent

active

055676618

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of: preparing a semiconductor substrate having convexities and concavities on the surface thereof; and generating plasma by using organic silicon having silazane bonding and oxidant and depositing a planarized insulating film on the semiconductor substrate by plasma chemical vapor deposition. The organic silicon may be HMCTSZ and the substrate temperature during deposition is preferably not higher than about 100.degree. C., e.g. 50.degree. C.

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