Formation of Ohmic contacts in III-nitride light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

Reexamination Certificate

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C257S098000, C257S103000

Reexamination Certificate

active

07345323

ABSTRACT:
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

REFERENCES:
patent: 5644165 (1997-07-01), Goto
patent: 5747832 (1998-05-01), Nakamura et al.
patent: 5753939 (1998-05-01), Sassa et al.
patent: 5804839 (1998-09-01), Hanaoka et al.
patent: 5987047 (1999-11-01), Valster et al.
patent: 5998810 (1999-12-01), Hatano et al.
patent: 6005258 (1999-12-01), Manabe et al.
patent: 6100586 (2000-08-01), Chen et al.
patent: 6121127 (2000-09-01), Shibata et al.
patent: 6121634 (2000-09-01), Saito et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6239490 (2001-05-01), Yamada et al.
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 6445127 (2002-09-01), Oku et al.
patent: 6531716 (2003-03-01), Udagawa
patent: 6537838 (2003-03-01), Stockman
patent: 0 703 631 (1996-03-01), None
patent: 1 014 455 (2000-06-01), None
patent: 1 017 113 (2000-07-01), None
patent: 1 041 650 (2000-10-01), None
patent: 1 079 444 (2001-02-01), None
patent: 1 009 319 (1989-01-01), None
patent: 0 833 0629 (1996-12-01), None
patent: 10-173231 (1998-06-01), None
patent: WO 00/59046 (2000-10-01), None

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