Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2005-03-30
2008-03-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S098000, C257S103000
Reexamination Certificate
active
07345323
ABSTRACT:
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
REFERENCES:
patent: 5644165 (1997-07-01), Goto
patent: 5747832 (1998-05-01), Nakamura et al.
patent: 5753939 (1998-05-01), Sassa et al.
patent: 5804839 (1998-09-01), Hanaoka et al.
patent: 5987047 (1999-11-01), Valster et al.
patent: 5998810 (1999-12-01), Hatano et al.
patent: 6005258 (1999-12-01), Manabe et al.
patent: 6100586 (2000-08-01), Chen et al.
patent: 6121127 (2000-09-01), Shibata et al.
patent: 6121634 (2000-09-01), Saito et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6239490 (2001-05-01), Yamada et al.
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 6445127 (2002-09-01), Oku et al.
patent: 6531716 (2003-03-01), Udagawa
patent: 6537838 (2003-03-01), Stockman
patent: 0 703 631 (1996-03-01), None
patent: 1 014 455 (2000-06-01), None
patent: 1 017 113 (2000-07-01), None
patent: 1 041 650 (2000-10-01), None
patent: 1 079 444 (2001-02-01), None
patent: 1 009 319 (1989-01-01), None
patent: 0 833 0629 (1996-12-01), None
patent: 10-173231 (1998-06-01), None
patent: WO 00/59046 (2000-10-01), None
Camras Michael D.
Chen, legal representative Xiaoping
Christenson Gina L.
Goetz Werner K.
Kern R. Scott
Leiterman Rachel V.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
Tran Tan N.
LandOfFree
Formation of Ohmic contacts in III-nitride light emitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of Ohmic contacts in III-nitride light emitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of Ohmic contacts in III-nitride light emitting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3975995