Formation of normal resistors by degenerate doping of substrates

Details Formation of normal resistors by degenerate doping of substrates Formation of normal resistors by degenerate doping of substrates

1983-04-01

1985-10-01

Edlow, Martin H.

357 4, 357 12, 357 57, H01L 3922

Patent

active

045449376

ABSTRACT:
In superconductive integrated circuit a semiconductor substrate is used in combination with normal resistors formed by degenerate doping of the substrate in selected regions. Doping is preferably performed by planar diffusion or ion implantation. Application of the invention to fabrication of a Josephson Atto-Weber gate by forming a normal resistor intermediate the junctions is also disclosed.

REFERENCES:
patent: 4220959 (1980-09-01), Kroger
patent: 4224630 (1980-09-01), Kroger
patent: 4421785 (1983-12-01), Kroger
patent: 4423430 (1983-12-01), Masuo
patent: 4430662 (1984-02-01), Jillie, Jr.
patent: 4470190 (1984-09-01), Fulton
patent: 4486464 (1984-12-01), Young
patent: 4490733 (1984-12-01), Kroger

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