Formation of multisegmented plated through holes

Details Formation of multisegmented plated through holes Formation of multisegmented plated through holes

2006-02-14

2006-02-14

Chang, Rick Kiltae (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S846000, C029S830000, C427S097100, C427S099300, C174S266000, C174S262000, C174S265000

Reexamination Certificate

active

06996903

ABSTRACT:
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.

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Multi Layer Substrate With Low Coefficent of Thermal Expansion, Nakamura et al., 2000 International Symposium on Microelect, pp. 235-240.

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