Formation of multilayer dopant distributions in a semiconductor

Details Formation of multilayer dopant distributions in a semiconductor Formation of multilayer dopant distributions in a semiconductor

1980-05-30

1982-12-21

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 219121LH, 357 91, 427 531, H01L 734, H01L 21265

Patent

active

043647782

ABSTRACT:
A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a low segregation coefficient and a second dopant having a high segregation coefficient. During rapid resolidification of the melt, the first dopant segregates toward the surface, while the second dopant remains substantially in place, producing a junction. The production of diodes, bipolar and field effect transistors, Schottky barriers, ohmic contacts, junction isolated surface regions, high conductivity paths, etc., is possible by this method.

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