Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – With textured surface
Reexamination Certificate
2006-01-31
2006-01-31
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
With textured surface
C257S347000, C257S619000, C257S754000, C257S750000
Reexamination Certificate
active
06992388
ABSTRACT:
This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
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Anya Igwe U.
Baumeister B. William
Carlson David V.
Jorgenson Lisa K.
STMicroelectronics Inc.
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