Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1976-12-29
1978-08-08
Goolkasian, John T.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 93, 427 94, 156646, 148 15, 29576B, 29578, 357 54, 357 91, B05D 306, B05D 512
Patent
active
041058054
ABSTRACT:
A layer of silicon nitride (Si.sub.3 N.sub.4) is deposited on a silicon substrate. A mask provided with windows representing device structures is then formed over the silicon nitride layer. Oxygen is then implanted through the window portion of the silicon nitride layer into the Si.sub.3 N.sub.4 /Si interface region to form a tunneling insulator interface layer of silicon dioxide (SiO.sub.2). The final structure is heat treated and then has the form Si.sub.3 N.sub.4 /SiO.sub.2 /Si. It can be made into a metal nitride oxide semiconductor (MNOS) field effect transistor device by conventional diffusion, ion implant and metallization processes.
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Watanabe et al., "Formation of SiO.sub.2 Films by Oxygen-Ion Bombardment," apan J. Appl. Phys. 5 (1966), pp. 737-738.
Glendinning William B.
Mark Albert
Edelberg Nathan
Goolkasian John T.
Gordon Roy E.
Murray Jeremiah G.
The United States of America as represented by the Secretary of
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