Formation of low k dielectric

Details Formation of low k dielectric Formation of low k dielectric

1999-02-05

2000-11-21

Picardat, Kevin M.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

438422, 257522, H01L 2176

Patent

active

061502324

ABSTRACT:
A method for creating low intra-level dielectric interface between conducting lines using conventional deposition and etching processes. A layer of conducting lines is formed interspersed with dielectric material. A dummy, high-density pattern of low k dielectric material is created on top of this layer. The dielectric material between the metal lines is removed. The dummy high-density pattern is interconnected, deposited on top of this interconnected layer is a low k dielectric to form an inter layer dielectric.

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patent: 6057226 (2000-05-01), Wong

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