Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-12-18
2000-05-09
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257335, 257344, 257345, 257388, 257401, 257404, 257408, 257410, 438182, H01L 2972
Patent
active
060607335
ABSTRACT:
The formation of lightly doped regions under a gate of a transistor that has a reduced gate oxide is disclosed. In one embodiment, a method includes four steps. In the first step, a gate is formed over a semiconductor substrate. In the second step, the gate oxide is etched to reduce the length of the gate oxide. In the third step, a first ion implantation is applied, at an angle other than perpendicular to the substrate. Finally, in the fourth step, a second ion implantation is applied, perpendicular to the substrate.
REFERENCES:
patent: 5631485 (1997-05-01), Wei et al.
patent: 5734185 (1998-03-01), Iguchi et al.
Fulford H. James
Gardner Mark I.
Advanced Micro Devices , Inc.
Wojciechowicz Edward
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