Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2006-05-25
2008-11-18
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S455000, C257SE21545
Reexamination Certificate
active
07452784
ABSTRACT:
The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical insulating pillars. The vertical insulating pillars each preferably has a ledge extending between the base semiconductor substrate layer and the semiconductor device layer. The SOI substrates of the present invention can be readily formed from a precursor substrate structure with a “floating” semiconductor device layer that is spaced apart from the base semiconductor substrate layer by an air gap and is supported by one or more vertical insulating pillars. The air gap is preferably formed by selective removal of a sacrificial layer located between the base semiconductor substrate layer and the semiconductor device layer.
REFERENCES:
patent: 5057450 (1991-10-01), Bronner et al.
patent: 5364800 (1994-11-01), Joyner
patent: 5490034 (1996-02-01), Zavracky et al.
patent: 6277703 (2001-08-01), Barlocchi et al.
patent: 6537894 (2003-03-01), Skotnicki et al.
patent: 6759714 (2004-07-01), Kim et al.
patent: 6887773 (2005-05-01), Gunn, III et al.
patent: 6936522 (2005-08-01), Steegen et al.
patent: 7015147 (2006-03-01), Lee et al.
patent: 2004/0124439 (2004-07-01), Miniami et al.
patent: 2004/0262695 (2004-12-01), Steegan et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
Chidambarrao Dureseti
Henson William K.
Ng Hung Y.
Rim Kern
Wann Hsingjen
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Smith Bradley K
LandOfFree
Formation of improved SOI substrates using bulk... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of improved SOI substrates using bulk..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of improved SOI substrates using bulk... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037518