Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-10-03
2006-10-03
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C438S481000
Reexamination Certificate
active
07115895
ABSTRACT:
Method for making a semiconductor structures comprising the steps:—forming a virtual substrate on a silicon substrate with a graded Si1-xGexlayer and a non-graded Si1-xGexlayer, using a high-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process with a growth rate above 2 nm/s, a substrate temperature between 400° and 850° C., and a total reactive gas flow at the gas inlet between 5 sccm and 200 sccm;—forming an active region on the virtual substrate that comprises a Ge-channel and at least one modulation-doped layer using a low-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process by introducing hydrogen (H2) into the growth chamber, maintaining a substrate temperature between 400° and 500° C., and by introducing a dopant gas in a pulsed manner into the growth chamber to provide for the modulation-doped layer.
Eidgenoessische Technische Hochschule Zurich
Moetteli John
Moetteli & Associes SARL
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