Formation of heterojunctions utilizing back-side surface roughen

Details Formation of heterojunctions utilizing back-side surface roughen Formation of heterojunctions utilizing back-side surface roughen

1978-05-31

1979-06-26

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29576E, 29580, 29590, 148 13, 148175, 156612, 357 16, 357 52, H01L 21304, H01L 2120

Patent

active

041592140

ABSTRACT:
A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebaked on a carbide coated susceptor with palladium diffused hydrogen at about 1200.degree. C. and pretreated with phosphine at about 1140.degree. C. to form the silicon phosphide surface. The temperature is lowered to 800.degree.-900.degree. C. in the presence of phosphine and trimethyl gallium is introduced at a ratio of 1 to 10 with the phosphine. Cracks in the gallium phosphide are prevented by roughing the bottom non-phosphine. Cracks in the silicon substrate such that the roughed surface is under compressive stress and induces tensile stress on the phosphided surface to reduce the compressive stress reduced by gallium phosphide layer when the substrate is annealed at about 1200.degree. C.

REFERENCES:
patent: 3579815 (1971-05-01), Gentry
patent: 3808674 (1974-05-01), Francombe et al.
patent: 3821039 (1974-06-01), Ettenberg
patent: 3861969 (1975-01-01), Ono et al.
patent: 3905162 (1975-09-01), Lawrence et al.
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4018626 (1977-04-01), Schwuttke et al.
Wenzel, C., "Slip and Bowing Control - Techniques" SCP and Solid State Tech., Aug. 1967, pp. 40-44.
Bean et al., "Some Properties of Vapor Deposited SiC".
J. Electrochem. Soc., vol. 114, No. 11, Nov., 1967, pp. 1158-1161.
Bratter et al., "Dielectric Structure as an Out-diffusion Barrier".
Blachman, A.G., "Use of Bias-Sputtered Film to Stress-Film" Ibid., vol. 15, No. 9, Feb. 1973, pp. 2701-2702.

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