Formation of heat-resistant dielectric coatings

Stock material or miscellaneous articles – Composite – Of silicon containing

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427377, 427387, B32B 904

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052544117

ABSTRACT:
Heat resistant, dielectric coatings are formed by applying a heat resistant coating composition comprising an organic silicon polymer, a silazane compound, and an inorganic filler to a substrate, and baking the coating in ammoniacal atmosphere at 200.degree. to 1000.degree. C. Similarly, heat resistant, dielectric coatings are formed by applying the same composition as above to a substrate, baking a first coating layer in air, applying an organic silicon polymer base coating composition to the first coating layer, and baking a second coating layer in ammoniacal atmosphere.

REFERENCES:
Patent Abstracts of Japan, vol. 14, No. 291 (M-989) Jun. 22, 1990 and JP A-2,092,534 (Showa Electric Wire & Cable Co. Ltd.) Apr. 3, 1990.
Patent Abstracts of Japan, vol. 13, No. 29 (C-562) (3377) Jan. 23, 1989 and JP A-63-234 069 (Showa Electric Wire & Cable Co., Ltd.) Aug. 29, 1988.
Chemical Abstracts, vol. 100, No. 20, May 1984, Columbus Ohio, US; Abstr. No. 160896H, Kazakov M. E. et al., Thermal. Transformations of Methyl Phenyl Oligocyclosilazanes on a Carbon Susbstrate.
Chemical Abstracts vol. 90, No. 14, Apr. 1979, Columbus Ohio, U.S.; Abs. No. 108623C, Mazaev V. A. Material Made from Polymer Saturated Boron Nitride.

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