Formation of group III-V nitride films on sapphire substrates wi

Details Formation of group III-V nitride films on sapphire substrates wi Formation of group III-V nitride films on sapphire substrates wi

1998-05-22

2000-05-16

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 257190, 257 76, 438 47, 438 94, 438 95, H01L 3300, H01L 2120

Patent

active

060640782

ABSTRACT:
A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.

REFERENCES:
patent: 5306386 (1994-04-01), De Lyon
patent: 5382542 (1995-01-01), Zinck et al.
patent: 5399206 (1995-03-01), De Lyon
patent: 5670798 (1997-09-01), Schetzina
Appl. Phys. Lett. 71(16), Oct. 20, 1997, "Structure of GaN films grown by hydride vapor phase epitaxy", L.T. Romano et al., pp. 2283-2285.
Submission to Journal of Crystal Growth, "The Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy", R.J. Molnar; Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173-9108; W. Gotz et al., Xerox Palo Alto Research Center, Palo Alto, CA 94304, 12 pages, Jun. 1998.
Nature, International weekly journal of Science, vol. 386, Mar. 27, 1997, "Nitride-based semiconductors for blue and green light-emitting devices", F.A. Ponce et al., pp. 351-359.

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