Formation of gate electrode

Details Formation of gate electrode Formation of gate electrode

1999-04-15

2000-10-17

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438439, 438452, 438592, H01L 2176

Patent

active

061331155

ABSTRACT:
The invention relates to an improvement in formation of a gate electrode. In the invention, there are formed first and second oxides on a surface of a substrate. The second oxides have a top surface higher by a height H than top surfaces of the first oxides. A gate electrode composed of a polysilicon film and a silicide film deposited on the polysilicon film is formed so that the polysilicon film is planarized at a level higher than top surfaces of the first oxides but lower than top surfaces of the second oxides. The invention prevents excessive etching of the polysilicon film without fabrication steps being increased, and thus makes it possible to form a gate electrode having a dimension defined by a mask.

REFERENCES:
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4800171 (1989-01-01), Iranmanesh et al.
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4950616 (1990-08-01), Kahng et al.
patent: 5001074 (1991-03-01), Arnborg
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5258096 (1993-11-01), Sandu et al.
patent: 5261998 (1993-11-01), Kanetake et al.
patent: 5346587 (1994-09-01), Doan et al.
patent: 5405790 (1995-04-01), Rahim et al.
patent: 5441902 (1995-08-01), Hsieh et al.
patent: 5494842 (1996-02-01), Azmanov
patent: 5777358 (1998-07-01), Yajima
Y. Kawamoto et al., "A Half Micron Technology for an Experimental 16 Mbit DRAM Using i-Line Stepper," '88 VL Symp., pp. 17-18.

Affiliated with

Also associated with

Rating

Formation of gate electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of gate electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of gate electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-468083