Formation of epitaxial si-ge heterostructures by solid phase epi

Details Formation of epitaxial si-ge heterostructures by solid phase epi Formation of epitaxial si-ge heterostructures by solid phase epi

1989-12-15

1990-12-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG3, 148DIG48, 148DIG59, 148DIG72, 148DIG154, 148 334, 156603, 437 82, 437126, 437247, 437973, 437976, H01L 2120

Patent

active

049753878

ABSTRACT:
Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.

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Ebner et al., "Pulsed-Laser-Assisted Molecular Beam Epitaxy", IBM TDB, vol. 6, No. 11, Apr. 1984, pp. 6215-6216.
Hung et al., "Epitaxial Growth of Si Deposited on (100) Si", Appl. Phys. Lett. 37(10), Nov. 15, 1980, pp. 909-911.
Grimaldi et al., "Epitaxial Growth of Amorphons Ge Films . . . ", J. Appl. Phys. 52(3), Mar. 1981, pp. 1351-1355.

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