Metal treatment – Compositions – Heat treating
Patent
1978-11-20
1979-12-18
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148174, 148175, 204192N, 204192S, 427 38, 427 85, H01L 21203, H01L 21263
Patent
active
041793129
ABSTRACT:
A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.
REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 3434894 (1969-03-01), Gale
patent: 3520741 (1970-07-01), Mankarious
patent: 3571642 (1971-03-01), Westcott
patent: 3909305 (1975-09-01), Boroffka et al.
patent: 4074139 (1978-02-01), Pankove
patent: 4086108 (1978-04-01), Gonda
patent: 4140546 (1979-02-01), Krimmel
Yagi et al., "Germanium and Silicon . . . Ion Beam Deposition", Japanese J. Applied Physics, vol. 16, No. 2, Feb. 1977, pp. 245-251.
Amano et al., "Thin Film Deposition . . . And Design", J. Vac. Sci. Technol., vol. 13, No. 2, Mar./Apr. 1976, pp. 591-595.
Esaki et al., "Incorporation of Dopant . . . Ion Implantation", I.B.M. Tech. Discl. Bull., vol. 17, No. 10, Mar. 1975, pp. 3108-3109.
Keller John H.
McKenna Charles M.
Winnard James R.
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
Saile George O.
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