Formation of electromigration resistant aluminum alloy conductor

Details Formation of electromigration resistant aluminum alloy conductor Formation of electromigration resistant aluminum alloy conductor

1984-05-11

1986-01-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29578, 148 15, 148188, 148 13, 148 131, 357 67, 427 90, H01L 21324, H01L 21477

Patent

active

045661774

ABSTRACT:
Electromigration resistance of aluminum alloy conductors in semiconductor devices is found to significantly increase by rapidly annealing the conductors by employing an annealing cycle with a peak temperature of 520.degree.-580.degree. C. and a cycle time of about 5 to 30 seconds such as is developed by high intensity CW lamps.

REFERENCES:
patent: 3848330 (1974-11-01), Hall et al.
patent: 4062720 (1977-12-01), Alcorn et al.
patent: 4154874 (1979-05-01), Howard et al.
patent: 4331485 (1982-05-01), Gat
patent: 4352239 (1982-10-01), Pierce

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