Formation of electrodes for magnetoresistive sensor

Details Formation of electrodes for magnetoresistive sensor Formation of electrodes for magnetoresistive sensor

1982-06-08

1983-10-25

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23C 1500

Patent

active

044117574

ABSTRACT:
Electrodes for a magnetoresistive sensor can be formed easily by a method wherein a double-layer structure of Mo and Al on a film of a magnetoresistive material such as permalloy is formed to have a predetermined pattern, firstly by exposing an Al layer to a chemical etching solution or subjecting the Al layer to the ion-milling treatment to give said Al layer said pattern and then subjecting a Mo layer to the plasma etching or reactive sputter etching treatment to give said Mo layer said pattern.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4308089 (1981-12-01), Iida et al.
patent: 4352716 (1982-10-01), Schaible et al.
patent: 4377169 (1983-03-01), Banks
Bensauula et al. Appl. Phys. Lett. 426), Jan. 1983, p. 122-123.

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