Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-07-15
2008-07-15
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S522000, C257SE27109
Reexamination Certificate
active
07400024
ABSTRACT:
A method for forming deep trench or via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial material (e.g. poly-Si), depositing spacers on the sidewalls of the unfilled part of the hole (e.g. TEOS) to narrow the opening, removing through said narrowed opening the remaining part of the sacrificial material (e.g. by isotropic etching) and finally sealing the opening of the airgap by depositing a conformal layer (TEOS) above the spacers. The method of forming an airgap is demonstrated successfully for use as deep trench isolation structures in BiCMOS devices.
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Interuniversitair Microelektronica Centrum (IMEC vzw)
Knobbe Martens Olson & Bear LLP
Tsai H. Jey
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