Formation of controlled sublithographic structures

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S725000, C438S737000, C438S740000, C430S311000, C257SE21206

Reexamination Certificate

active

07087532

ABSTRACT:
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.

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