Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-08
2006-08-08
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S725000, C438S737000, C438S740000, C430S311000, C257SE21206
Reexamination Certificate
active
07087532
ABSTRACT:
A process for forming sublithographic structures such as fins employs a hardmask protective layer above a hardmask to absorb damage during a dry etching step, thereby preserving symmetry in the hardmask and eliminating a source of defects.
REFERENCES:
patent: 5714039 (1998-02-01), Beilstein, Jr. et al.
patent: 5834818 (1998-11-01), Beilstein, Jr. et al.
patent: 5920101 (1999-07-01), Beilstein, Jr. et al.
patent: 6040214 (2000-03-01), Boyd et al.
patent: 6194268 (2001-02-01), Furukawa et al.
patent: 6498061 (2002-12-01), Divakaruni et al.
patent: 6610607 (2003-08-01), Armbrust et al.
patent: 2004/0002203 (2004-01-01), Deshpande et al.
patent: 2005/0164478 (2005-07-01), Chan et al.
patent: 2005/0255651 (2005-11-01), Qian et al.
patent: 2006/0060562 (2006-03-01), Furukawa et al.
Beintner Jochen C.
Dobuzinsky David M
Panda Siddhartha
International Business Machines - Corporation
Petraske Eric W.
Toledo Fernando L.
LandOfFree
Formation of controlled sublithographic structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Formation of controlled sublithographic structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of controlled sublithographic structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3670376