Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-02-28
2000-05-30
Meeks, Timothy
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438255, 438565, 438964, 427 99, 427255393, 4272557, 4273977, C23C 1624
Patent
active
060690534
ABSTRACT:
The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of doped amorphous silicon on a substrate at a substantially constant deposition temperature; and converting the amorphous silicon layer into hemispherical grain silicon by annealing the amorphous silicon layer at substantially the deposition temperature while varying pressure. In another aspect, the methods involve forming a discontinuous first layer of doped silicon on a substrate; forming a second layer of amorphous silicon on the first layer of doped silicon and the substrate not covered by the first layer of doped silicon; and annealing the first and second layers. In yet another aspect, the methods involve forming a discontinuous first layer of silicon on a substrate and forming a second conformal layer of doped amorphous silicon on the first layer of doped silicon.
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Ping Er-Xuan
Thakur Randhir
Meeks Timothy
Micro)n Technology, Inc.
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