Formation of buried diffusion devices

Details Formation of buried diffusion devices Formation of buried diffusion devices

1986-03-03

1987-12-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 68, 357 34, 148DIG147, 156643, 156653, 437 67, 437 72, H01L 2100

Patent

active

047110171

ABSTRACT:
A low collector parasitic resistance in bipolar transistors may be achieved without the use of an epitaxial layer or a high energy implant. Essentially, the invention employs the use of trenches in an N.sup.- layer overlying a P.sup.- substrate to surround the transistor, forming an N.sup.+ region in the walls defining the trench and below the surface, extending the trench into the P.sup.- substrate, implanting the bottom of the trench with a P-type dopant and refilling the trench with insulating material.
The process of the invention permits fabrication of complex bipolar integrated circuits having a very high performance, and is particularly adaptable to very small geometry devices of 1 .mu.m and lower.

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patent: 4528047 (1985-07-01), Beyer et al.
patent: 4631803 (1986-12-01), Hunter et al.

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