Formation of a slot in a silicon substrate

Details Formation of a slot in a silicon substrate Formation of a slot in a silicon substrate

2007-08-21

2010-12-21

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S702000, C438S703000, C438S704000, C438S712000, C257SE21249

Reexamination Certificate

active

07855151

ABSTRACT:
A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.

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