Formation of a silicon sheet by cold surface casting

Details Formation of a silicon sheet by cold surface casting Formation of a silicon sheet by cold surface casting

2007-11-13

2007-11-13

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

C117S038000, C117S043000, C117S044000, C117S047000, C117S201000, C117S202000, C117S931000, C118S405000

Reexamination Certificate

active

10918681

ABSTRACT:
Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface layer of substantially inert aluminum oxide. It is believed that the molten silicon does not wet the surface of the supporting substrate and the surface of the supporting substrate does not chemically interact with the silicon. It is shown that, in spite of the enormous temperature difference, molten silicon (ca. 1450° C.) can be stabilized, by appropriate energy control, in direct (but non-wetted) contact with cold (ca. 40° C.) material such as aluminum.

REFERENCES:
patent: 4637855 (1987-01-01), Witter et al.
patent: 5431127 (1995-07-01), Stevens et al.
patent: 5614020 (1997-03-01), Stevens et al.
patent: 6451277 (2002-09-01), Lord

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